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APTGT300U170D4G
Single switch Trench + Field Stop IGBT(R) Power Module VCES = 1700V IC = 300A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Low stray inductance - M6 connectors for power - M4 connectors for signal * High level of integration
1
1
3 5 2
2 4 5
3
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C
Max ratings 1700 530 300 600 20 1470 600A@1650V
Unit V
March, 2006 1-5 APTGT300U170D4G - Rev 1
A V W
Reverse Bias Safe Operation Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
APTGT300U170D4G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Test Conditions Min Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current VGE = 0V, VCE = 1700V Tj = 25C VGE = 15V IC = 300A Tj = 125C VGE = VCE , IC = 12mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 900V IC = 300A R G = 4.7 Inductive Switching (125C) VGE = 15V VBus = 900V IC = 300A R G = 4.7 VGE = 15V Tj = 125C VBus = 900V IC = 300A Tj = 125C R G = 4.7 Test Conditions VR=1700V IF = 300A VGE = 0V Tj = 25C Tj = 125C Tc=80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ 2.0 2.4 5.8 Max 1 2.4 6.4
400
Unit mA V V nA
5.2
Dynamic Characteristics
Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn On Energy Turn Off Energy
Min
Typ 25 0.9 280 100 750 100 330 100 900 200 115
Max
Unit nF
ns
ns
mJ 95
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Er trr Qrr Maximum Reverse Leakage Current DC forward current Forward Voltage Reverse Recovery Energy Reverse Recovery Time Reverse Recovery Charge
Min 1700
Typ
Max 750 1000
Unit V A A
IF = 300A VR = 900V
di/dt =3500A/s
APT website - http://www.advancedpower.com
2-5
APTGT300U170D4G - Rev 1
March, 2006
300 1.8 1.9 35 70 410 520 75 125
2.2
V mJ ns C
APTGT300U170D4G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight M6 M4 IGBT Diode 3500 -40 -40 -40 3 1 Min Typ Max 0.085 0.13 150 125 125 5 2 420 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
D4 Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT300U170D4G - Rev 1
March, 2006
APTGT300U170D4G
Typical Performance Curve
Output Characteristics (V GE=15V) Output Characteristics 600 500
T J=25C
600 500
IC (A)
TJ = 125C
V GE=19V
VGE=13V
400 300 200 100 0 0
400 IC (A)
T J=125C
VGE=15V
300 200 100 0
VGE=9V
1
2 VCE (V)
3
4
0
1
2
3 VCE (V)
4
5
600 500 400
Transfert Characteristics 300
T J=25C
Energy losses vs Collector Current
VCE = 900V VGE = 15V RG = 4.7 TJ = 125C Eon
250 E (mJ)
T J=125C
200 150 100
IC (A)
300 200 100 0 5 6 7 8 V GE (V) Switching Energy Losses vs Gate Resistance 350 300 250
VCE = 900V VGE =15V IC = 300A T J = 125C TJ=125C
Eoff
Er
50 0 9 10 11 0 100 200 IC (A) Reverse Bias Safe Operating Area 700 600
Eon
300
400
500
500 IC (A) 400 300 200
VGE=15V T J=125C RG=4.7
E (mJ)
200 150 100 50 0 0
Eoff Er
100 0 0
5
10 15 20 25 Gate Resistance (ohms)
30
400
800
1200
1600
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.09 Thermal Impedance (C/W) 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.00001 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.3 0.9
IGBT
0.5
rectangular Pulse Duration (Seconds)
APT website - http://www.advancedpower.com
4-5
APTGT300U170D4G - Rev 1
March, 2006
0.7
APTGT300U170D4G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 25 20 15 10 5 0 0 60 120 180 240 IC (A) 300 360 420
ZCS ZVS VCE =900V D=50% RG=4.7 TJ =125C TC=75C
Forward Characteristic of diode 600 500
T J=25C
400 IF (A) 300 200 100 0 0 0.5 1 1.5 V F (V) 2 2.5 3
T J=125C T J=125C
hard switching
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 1 10 0.9 0.7 0.5
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT300U170D4G - Rev 1
APT reserves the right to change, without notice, the specifications and information contained herein
March, 2006

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